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SFH6755T/56T/57T
Vishay Semiconductors
High Speed Optocoupler, 10 MBd SOIC-8 Package
Features
* Choice of CMR performance of 10 kV/s, Pb-free 5 kV/s, and 100 v/s * External creepage distance > 5 mm e3 * High speed: 10 MBd typical RoHS * + 5 V CMOS compatibility COMPLIANT * Guaranteed AC and DC performance over temperature: - 40 to + 100 C Temp. Range * Pure tin leads * Meets IEC60068-2-42 (SO2) and IEC60068-2-43 (H2S) requirements * Low input current capability: 5 mA * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
ATTENTION
Observe Precaution For Handing Electrostatic Sensitive Devices (ESD)
20050
Dual channel
A1 1 C1 C2 A2
18921-7
8 7 6 5
2 3 4
VCC VO1 VO2 GND
SFH6755T/56T/57T
Description
The SFH675xT-series, is a dual channel 10 MBd optocoupler utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-transister output, providing less leakage compared to an open collector Schottky clamped transister output. The internal shield provides a guaranteed common mode transient immunity of 5 kV/s for the SFH6756T and 10 kV/s for the SFH6757T. The use of a 0.1 F bypass capacitor connected between pin 5 and 8 is recommended.
Agency Approvals
* UL1577, File No. E52744 System Code Y * CUL - File No. E52744, equivalent to CSA bulletin 5A * DIN EN 60747-5-2 (VDE0884) * Reinforced insulation rating * VDE available with Option 1 per IEC60950 2.10.5.1
Order Information
Part SFH6755T SFH6756T SFH6757T Remarks 100 V/s, Dual channel, SOIC-8 5 kV/s, Dual channel, SOIC-8 10 kV/s, Dual channel, SOIC-8
Applications
* * * * * * * * * Microprocessor System Interface PLC, ATE input/output isolation Computer peripheral interface Digital Fieldbus Isolation: CC-Link, DeviceNet, Profibus, SDS High speed A/D and D/A conversion AC Plasma Display Panel Level Shifting Multiplexed Data Transmission Digital control power supply Ground loop elimination
Truth Table (Positive Logic)
LED ON OFF ON OFF ON OFF ENABLE H H L L NC NC OUTPUT L H H H L H
Document Number 81331 Rev. 1.0, 26-Jun-06
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SFH6755T/56T/57T
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Average forward current Reverse input voltage Surge current t = 100 s Test condition Symbol IF VR IFSM Value 15 5 200 Unit mA V mA
Output
Parameter Supply voltage Output current Output voltage Output power dissipation per channel Test condition 1 minute max. Symbol VCC IO VO Pdiss Value 7 50 7 60 Unit V mA V mW
Coupler
Parameter Storage temperature Operating temperature Lead solder temperature Solder reflow temperature Isolation test voltage for 10 sec. for 1 minute t = 1.0 sec. VISO Test condition Symbol Tstg Tamb Value - 55 to + 150 - 40 to + 100 260 260 3000 Unit C C C C VRMS
Recommended Operating Conditions
Parameter Operating temperature Supply voltage Input current low level Input current high level Output pull up resistor Fanout RL = 1 k Test condition Symbol Tamb Vcc IFL IFH RL N Min - 40 4.5 0 5 330 Typ. Max 100 5.5 250 15 4K 5 Unit C V A mA -
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Document Number 81331 Rev. 1.0, 26-Jun-06
SFH6755T/56T/57T
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C and Vcc = 5.5 V, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Input forward voltage Reverse current Input capacitance Test condition IF = 10 mA VR = 5.0 V f = 1 MHz, VF = 0 V Symbol VF IR CI Min 1.1 Typ. 1.4 0.01 55 Max 1.7 10 Unit V A pF
Output
Parameter High level supply current (single channel) High level supply current (dual channel) Low level supply current (single channel) Low level supply current (dual channel) High level output current Low level output voltage Input threshold current Test condition VE = 0.5 V, IF = 0 mA Symbol ICCH Min Typ. 4.1 Max 7.0 Unit mA
VE = VCC, IF = 0 mA IF = 0 mA
ICCH ICCH
3.3 6.5
6.0 12.0
mA mA
VE = 0.5 V, IF = 10 mA
ICCL
4.0
7.0
mA
VE = VCC, IF = 10 mA IF = 10 mA
ICCL ICCL
3.3 6.5
6.0 12.0
mA mA
VE = 2.0 V, VO = 5.5 V, IF = 250 A VE = 2.0 V, IF = 5 mA, IOL (sinking) = 13 mA VE = 2.0 V, VO = 5.5 V, IOL (sinking) = 13 mA
IOH VOL ITH
0.002 0.2 2.4
1 0.6 5.0
A V mA
Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All Typicals at Ta = 25 C, VCC = 5 V. Parameter Propagation delay time to high output level Propagation delay time to low output level Pulse width distortion Propagation delay skew Output rise time (10 - 90 %) Output fall time (90 - 10 %) Test condition RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF Symbol tPLH tPHL | tPHL - tPLH | tPSK tr tf Min 20 25 Typ. 48 50 2.9 8 23 7 Max 100 100 35 40 Unit ns ns ns ns ns ns
Document Number 81331 Rev. 1.0, 26-Jun-06
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SFH6755T/56T/57T
Vishay Semiconductors
Pulse Gen. Zo = 50 t f = t r = 5 ns IF 1 Input Monitoring Node RM 2 3 4
VCC Dual Channel VCC 8 7 6 GND 5 0.1 F Bypass RL Output VO Monitoring Node Input IF IF = 7.5 mA IF = 3.75 mA 0 mA VOH 1.5 V VOL t PHL t PLH
Output VO
CL= 15 pF
20132
Figure 1. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
Common Mode Transient Immunity
Parameter Common mode transient immunity (high) Test condition |VCM| = 10 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C 1) |VCM| = 50 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C |VCM| = 1 kV, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C 3) Common mode transient immunity (low) |VCM| = 10 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25 C 1) |VCM| = 50 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25 C |VCM| = 1 kV, VCC = 5 V, IF = 7 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25
1) 2) 2) 2)
Symbol | CMH |
Min 100
Typ.
Max
Unit V/s
| CMH | | CMH| | CML|
5000 10000 100
10000 15000
V/s V/s V/s
| CML | | CML| C 3)
5000 10000
10000 15000
V/s V/s
For SFH6755T For SFH6756T 3) For SFH6757T
IF Dual Channel B 1 A 2 VFF 3 4 GND 7 6 5 VO 0.5 V VCC 8 +5V RL 0.1 F Bypass Output VO Monitoring Node V CM 0 V VO 5 V VCM (PEAK) Switch AT A: IF = 0 mA VO(min.) Switch AT A: IF = 7.5 mA VO(max.) CMH
18977-1
VCM + Pulse Generator Z O = 50
CML
20133
Figure 2. Dual Channel Test Circuit for Common Mode Transient Immunity
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Document Number 81331 Rev. 1.0, 26-Jun-06
SFH6755T/56T/57T
Vishay Semiconductors Safety and Insulation Ratings
As per IEC60747-5-2, 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Climatic Classification (according to IEC 68 part 1) Comparative Tracking Index VIOTM VIORM PSO ISI TSI Creepage Clearance Insulation thickness, reinforced rated per IEC60950 2.10.5.1 5 4 0.2 CTI 175 5000 560 350 150 165 Test condition Symbol Min Typ. 55/110/21 399 V V mW mA C mm mm mm Max Unit
Typical Characteristics
Tamb = 25 C unless otherwise specified
1.7 1.6 V F - Forward Voltage (V) 1.5 1.4 1.3 1.2 1.1 IF = 10 mA IF = 1 mA IF = 50 mA IF = 20 mA
7 6 I R - Reverse Current (nA) 5 4 3 2 1
1.0 - 40 - 20 0 20 40 60 80 17610 Tamb - Ambient Temperature (C)
100
0 - 40 - 20 0 20 40 60 80 17613-1 Tamb - Ambient Temperature (C)
100
Figure 3. Forward Voltage vs. Ambient Temperature
Figure 5. Reverse Current vs. Ambient Temperature
1.60 1.55 V F - Forward Voltage (V) 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 0
17611
4.0
I CCl - Low Level Supply Current (mA)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 - 40 - 20 VCC = 5 V IF = 10 mA VCC = 7 V IF = 10 mA
5
10 15 20 25 30 35 40 45 50 IF - Forward Current (mA)
0
20
40
60
80
100
17614
Tamb - Ambient Temperature (C)
Figure 4. Forward Voltage vs. Forward Current
Figure 6. Low Level Supply Current vs. Ambient Temperature
Document Number 81331 Rev. 1.0, 26-Jun-06
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SFH6755T/56T/57T
Vishay Semiconductors
I CCh - High Level Supply Current (mA)
3.5 3.4 3.3 3.2 3.1 3.0 2.9 2.8 - 40 - 20 VCC = 5 V IF = 0.25 mA
Vol - Low Level Output Voltage (V)
0.30
VCC = 7 V IF = 0.25 mA
0.25 0.20 0.15
VCC = 5.5 V IF = 5 mA
I L = 16 mA I L = 13 mA
I L = 10 mA 0.10 0.05 I L = 6 mA
0
20
40
60
80
100
17615
Tamb - Ambient Temperature (C)
0.00 - 40 - 20 0 20 40 60 80 17618 Tamb - Ambient Temperature (C)
100
Figure 7. High Level Supply Current vs. Ambient Temperature
Figure 10. Low Level Output Voltage vs. Ambient Temperature
2.8
I th - Input Threshold ON Current (A)
60
I ol - Low Level Output Current (mA)
2.7 2.6 2.5 2.4 2.3 2.2 RL = 4 k RL = 1 k R L = 350
50 40 30 20 10 0 - 40 - 20
IF = 5 mA IF = 10 mA
17616
2.1 - 40 - 20 0 20 40 60 80 Tamb - Ambient Temperature (C)
100
17619
0
20
40
60
80
100
Tamb - Ambient Temperature (C)
Figure 8. Input Threshold ON Current vs. Ambient Temperature
Figure 11. Low Level Output Current vs. Ambient Temperature
2.6
I th - Input Threshold OFF Current (A) I oh - High Level Output Current (nA)
50 45 40 35 30 25 20 15 10 5 0 - 40 - 20 0 20 40 60 80 Tamb - Ambient Temperature (C) 100
2.5 2.4 2.3 2.2 RL = 4 k 2.1 RL = 1 k 100
R L = 350
2.0 - 40 - 20 0 20 40 60 80 17617 Tamb - Ambient Temperature (C)
17620
Figure 9. Input Threshold OFF Current vs. Ambient Temperature
Figure 12. High Level Output Current vs. Ambient Temperature
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Document Number 81331 Rev. 1.0, 26-Jun-06
SFH6755T/56T/57T
Vishay Semiconductors
5.5
PWD - Pulse Width Distortion (ns)
50 40 30 20 R L = 1 k 10 R L = 350 R L = 4 k
5.0 4.5
Vo - Output Voltage (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 RL = 4 k R L = 350 RL = 1 k
17621
IF - Forward Input Current (mA)
17624
0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (C)
Figure 13. Output Voltage vs. Forward Input Current
Figure 16. Pulse Width Distortion vs. Ambient Temperature
120 t P - Propagation Delay time (ns) tPLH, 4 k 100 80 60 40 20 tPLH, 350 tPLH, 1 k
PWD - Pulse Width Distortion (ns)
60 50 40 30 20 10 0 5
17625
R L = 4 k
R L = 1 k
tPHL, 350
tPHL, 1 k tPHL, 4 k
17622
0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (C)
R L = 350 7 9 11 13 IF - Forward Current (mA) 15
Figure 14. Propagation Delay vs. Ambient Temperature
Figure 17. Pulse Width Distortion vs. Forward Current
120 tPLH, 4 k t P - Propagation Delay time (ns) t r,f - Rise and Fall Time (ns) 100 80 tPLH, 350 60 40 20 0 5
17623
300 tr, RL = 4 k 250 200 150 100 tr, RL = 1 k 50 tr, RL = 350 tf, RL = 350 tf, RL = 1 k tf, RL = 4 k
tPLH, 1 k
tPHL, 350
tPHL, 1 k tPHL, 4 k
7 9 11 13 IF - Forward Current (mA)
15
17626
0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (C)
Figure 15. Propagation Delay vs. Forward Current
Figure 18. Rise and Fall Time vs. Ambient Temperature
Document Number 81331 Rev. 1.0, 26-Jun-06
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SFH6755T/56T/57T
Vishay Semiconductors
300 tr, RL = 4 k t r,f - Rise and Fall Time (ns) 250 200 150 100 tr, RL = 1 k 50 0 5
17627
tf, RL = 350 tf, RL = 1 k tf, RL = 4 k
tr, RL = 350
7 9 11 13 IF - Forward Current (mA)
15
Figure 19. Rise and Fall Time vs. Forward Current
Package Dimensions in Inches (mm)
Dual Channel SOIC-8
0.120 0.002 (3.05 0.05) 0.050 (1.27) 0.240 (6.10) C L 0.154 0.002 (3.91 0.05)
R 0.010 (0.13)
0.014 (0.36) 0.036 (0.91) 0.170 (4.32) 0.260 (6.6) 0.045 (1.14) 7
Pin One I.D. 0.230 0.002 (5.84 0.05)
ISO Method A
0.016 (0.41) 0.015 0.002 (0.38 0.05) 40
0.0585 0.002 (1.49 0.05)
0.004 (0.10) 0.008 (0.20)
0.008 (0.20)
5 Max. R0.010 (0.25) Max.
0.125 0.002 (3.18 0.05)
0.050 (1.27) Typ. 0.040 (1.02)
i178020
0.020 0.004 (0.51 0.10) 2 Plcs.
Lead coplanarity 0.001 Max.
ESD Caution
This is an ESD (electro static discharge) sensitive device. Electrostatic charges accumulate on the human body and test equipment and can discharge without detection. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ESD withstand voltage of this device is up to 1500 V acc. to JESD22-A114-B.
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Document Number 81331 Rev. 1.0, 26-Jun-06
SFH6755T/56T/57T
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81331 Rev. 1.0, 26-Jun-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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